Buffered oxide etch 10:1 (BOE 10:1) semiconductor grade, with surfactant

Supplier: AHSI SPA
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000BOE101S-QT 000BOE101S-GAL
76541-074EA 48 USD
76541-074 76540-933
Buffered oxide etch 10:1 (BOE 10:1) semiconductor grade, with surfactant
Buffered oxide etch

Buffered Oxide Etchant 10:1 with surfactant is a slower-speed etchant for oxide films. 10:1 ratio of ammonium fluoride: HF. Contains non-PFAS surfactant to improve wet-out of high surface energy substrates or penetration of critical geometries.

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